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RJK03P7DPA PDF Datasheet

The RJK03P7DPA is Built In Sbd Dual N-channel Power Mos Fet. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 RJK03P7DPA
Built in SBD Dual N-channel Power MOS FET

Preliminary Datasheet RJK03P7DPA MOS1 30 V, 15 A, 9.4 mΩ max. MOS2 30 V, 30 A, 5.3 mΩ max. Built in SBD Dual N-channel Power MOS FET High Speed Power Switching R07DS0906EJ0110 Rev.1.10 Nov 01, 2012 Features  Low on-resistance  Capable of 4.5 V gate drive  High density mounting  Pb-free  Halogen-free Outline RENESAS Package code: PWSN0008DD-B (Package nam

Renesas Technology
Renesas Technology
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