Datasheet RJK03E5DPA Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	RJK03E5DPA	Silicon N Channel Power MOS FET Preliminary Datasheet RJK03E5DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1929-0210 Power Switching Rev.2.10 May 20, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 3.2 m	Renesas Technology

RJK03E5 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
RJK03E5DPA	Silicon N Channel Power MOS FET Preliminary Datasheet RJK03E5DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1929-0210 Power Switching Rev.2.10 May 20, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resist	Renesas Technology

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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