No | Part number | Description ( Function ) | Manufacturers | |
1 | RJK03E0DNS | Silicon N Channel Power MOS FET Preliminary Datasheet RJK03E0DNS Silicon N Channel Power MOS FET Power Switching Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 4.3 m typ. (at VGS = 10 V) Pb-free Halogen-free REJ03G1902-0200 Rev.2.00 Apr 06, 2010 Outline RENESAS Package code: PWSN |
Renesas Technology |
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