Datasheet RJK03C2DPB Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	RJK03C2DPB	Silicon N Channel Power MOS FET Preliminary RJK03C2DPB Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1831-0200 Power Switching Rev.2.00 Sep 29, 2009 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.9 mΩ typ. (at VGS = 10 V) • Pb	Renesas

RJK03C2 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
RJK03C2DPB	Silicon N Channel Power MOS FET Preliminary RJK03C2DPB Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1831-0200 Power Switching Rev.2.00 Sep 29, 2009 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.9 mΩ typ. (a	Renesas

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Número de pieza	Descripción	Fabricantes	PDF
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