No | Part number | Description ( Function ) | Manufacturers | |
1 | RJH65S04DPQ-A0 | IGBT ( Insulated Gate Bipolar Transistor ) Preliminary Datasheet RJH65S04DPQ-A0 650V - 50A - IGBT Application: Inverter Features Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 80 ns typ. (at CC = 300 V, VGE = 15 V, IC = 50 A, Rg = 10 |
Renesas |
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