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RJH65S04DPQ-A0 PDF Datasheet

The RJH65S04DPQ-A0 is Igbt ( Insulated Gate Bipolar Transistor ). It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 RJH65S04DPQ-A0
IGBT ( Insulated Gate Bipolar Transistor )

Preliminary Datasheet RJH65S04DPQ-A0 650V - 50A - IGBT Application: Inverter Features  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package  Trench gate and thin wafer technology  High speed switching tf = 80 ns typ. (at CC = 300 V, VGE = 15 V, IC = 50 A, Rg = 10 

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