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RJH60M3DPE PDF Datasheet

The RJH60M3DPE is Igbt ( Insulated Gate Bipolar Transistor ). It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 RJH60M3DPE
IGBT ( Insulated Gate Bipolar Transistor )

Preliminary Datasheet RJH60M3DPE 600 V - 17 A - IGBT Application: Inverter Features  Short circuit withstand time (8 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (100 ns typ.) in one package  Trench gate and thin wafer technology  High speed switching tf = 80 ns

Renesas
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RJH60M3DPP-M0   IGBT

Preliminary Datasheet RJH60M3DPP-M0 600 V - 17 A - IGBT Application: Inverter Features  Short circuit withstand time (8 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (10

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RJH60M3DPQ-A0   IGBT

Preliminary Datasheet RJH60M3DPQ-A0 600 V - 17 A - IGBT Application: Inverter Features  Short circuit withstand time (8 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (10

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