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RJH60D7DPK PDF Datasheet

The RJH60D7DPK is Igbt ( Insulated Gate Bipolar Transistor ). It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 RJH60D7DPK
IGBT ( Insulated Gate Bipolar Transistor )

Preliminary Datasheet RJH60D7DPK 600V - 50A - IGBT Application: Inverter R07DS0165EJ0400 Rev.4.00 Apr 19, 2012 Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (100 ns typ.) in one package  Trench gate and thin wafer technolo

Renesas Technology
Renesas Technology
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Recommended search results related to RJH60D7DPK

Part No Description ( Function) Manufacturers PDF
RJH60D7ADPK   IGBT

Preliminary Datasheet RJH60D7ADPK 600V - 50A - IGBT Application: Inverter Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (100 ns

Renesas
Renesas
datasheet pdf
RJH60D7BDPQ-E0   IGBT

Preliminary Datasheet RJH60D7BDPQ-E0 600V - 50A - IGBT Application: Inverter R07DS0795EJ0300 Rev.3.00 Jul 20, 2016 Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°

Renesas
Renesas
datasheet pdf
RJH60D7DPM   IGBT

Preliminary Datasheet RJH60D7DPM 600V - 50A - IGBT Application: Inverter Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (100 ns

Renesas
Renesas
datasheet pdf
RJH60D7DPQ-E0   IGBT

Preliminary Datasheet RJH60D7DPQ-E0 600V - 50A - IGBT Application: Inverter Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (100

Renesas
Renesas
datasheet pdf
1607   6 TONES SIREN/ALARM SOUND GENERATOR

UNISONIC TECHNOLOGIES CO.,LTD 1607 6 TONES SIREN/ALARM SOUND GENERATOR DESCRIPTION The UTC 1607 is a CMOS IC and design for 6 different alarm sounds application. The sound of UTC 1607 will be generated in cycling sequence. DIP-8 CMOS IC FEATURES * Low operating voltage: 2V ~ 5V

Unisonic Technologies
Unisonic Technologies
datasheet pdf

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