Datasheet RJH60D3DPE Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	RJH60D3DPE	Silicon N Channel IGBT RJH60D3DPE Silicon N Channel IGBT Application: Inverter Features • High breakdown-voltage • Low on-voltage • Built-in diode Preliminary REJ03G1844-0100 Rev.1.00 Oct 14, 2009 Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) C 4 G 1 2 3 E 1. Gat	Renesas Technology

RJH60D3 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
RJH60D3DPE	Silicon N Channel IGBT RJH60D3DPE Silicon N Channel IGBT Application: Inverter Features • High breakdown-voltage • Low on-voltage • Built-in diode Preliminary REJ03G1844-0100 Rev.1.00 Oct 14, 2009 Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) C	Renesas Technology
RJH60D3DPP-M0	IGBT Preliminary Datasheet RJH60D3DPP-M0 600V - 17A - IGBT Application: Inverter R07DS0162EJ0400 Rev.4.00 Apr 19, 2012 Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25°C	Renesas

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Número de pieza	Descripción	Fabricantes	PDF
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