| No | Part number | Description ( Function ) | Manufacturers | |
| 1 | RJH1CV5DPQ-E0 | IGBT ( Insulated Gate Bipolar Transistor ) Preliminary Datasheet RJH1CV5DPQ-E0 1200V - 25A - IGBT Application: Inverter Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C) Built-in fast recovery diode (trr = 200 ns typ.) in one package Trench gate and thin wafer technology High speed switching tf |
 Renesas |
|
0 1 2 3 4 5 6 7 8 9 |
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List of most widely used semiconductors
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| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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