|
|
Datasheet RJH1CF6RDPQ-80 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 1 | RJH1CF6RDPQ-80 | High Speed Power Switching Preliminary Datasheet
RJH1CF6RDPQ-80
Silicon N Channel IGBT High Speed Power Switching
Features
Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 30 |
 Renesas |
 |
RJH1CF6RDPQ Datasheet ( Hoja de datos ) - resultados coincidentes |
| Número de pieza | Descripción | Fabricantes | |
| RJH1CF6RDPQ-80 | High Speed Power Switching |
Renesas |
|
| Esta página es del resultado de búsqueda del RJH1CF6RDPQ-80. Si pulsa el resultado de búsqueda de RJH1CF6RDPQ-80 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Enlace url :
[1]
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |