No | Part number | Description ( Function ) | Manufacturers | |
1 | RJF0611JPD | Silicon N Channel MOS FET Target Specifications Datasheet RJF0611JPD Silicon N Channel MOS FET Series Power Switching R07DS0581EJ0200 Rev.2.00 Apr 13, 2012 Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case |
Renesas |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to RJF0611JPD |
Part No | Description ( Function) | Manufacturers | |
RJF0611DPD | Silicon N Channel MOS FET Target Specifications Datasheet RJF0611DPD Silicon N Channel MOS FET Series Power Switching R07DS0716EJ0100 Rev.1.00 Apr 17, 2012 Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature |
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RJF0611DPE | Silicon N Channel MOS FET Target Specifications Datasheet RJF0611DPE Silicon N Channel MOS FET Series Power Switching R07DS0717EJ0100 Rev.1.00 Apr 17, 2012 Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature |
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RJF0611JPE | Silicon N Channel MOS FET Target Specifications Datasheet RJF0611JPE Silicon N Channel MOS FET Series Power Switching R07DS0582EJ0200 Rev.2.00 Apr 13, 2012 Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature |
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23HS0611 | Hybrid Stepper Motors HYBRID STEPPING MOTORS 0.9˚ 2-PHASE 1.8˚ 3.6˚ 23HS SERIES 1.8° Key Features I High Torque I High Accuracy I Smooth Movement General Specifications Bi-polar Model Number 23HS0402-02 23HS0403-02 23HS0404-01 23HS0406 23HS0411 23HS0412 23HS0413 23HS1407 23HS1408 23HS2403 23 |
ETC |
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5082-0611 | Diode ( Rectifier ) |
American Microsemiconductor |
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