|
|
Datasheet RHU002N06 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
2 | RHU002N06 | Switching (60V/ 200mA) RHU002N06
Transistors
Switching (60V, 200mA)
RHU002N06
zFeatures 1) Low on-resistance. 2) High ESD. 3) High-speed switching. 4) Low-voltage drive (4V). 5) Easily designed drive circuits. 6) Easy to use in parallel. zExternal dimensions (Unit : mm)
(1)
0.65 0.65
0.3
(3)
1.25 2.1
0.15
0.2
(2) |
ROHM Semiconductor |
|
1 | RHU002N06FRA | 4V Drive Nch MOS FET 4V Drive Nch MOSFET
RHU002N06FRA
Structure Silicon N-channel MOSFET transistor
Features 1) Low on-resistance. 2) High ESD. 3) High-speed switching. 4) Low-voltage drive (4V). 5) Drive circuits can be simple. 6) Parallel use is easy.
AEC-Q101 Qualified
Dimensions (Unit : mm)
UMT3
SOT-323
|
ROHM Semiconductor |
Esta página es del resultado de búsqueda del RHU002N06. Si pulsa el resultado de búsqueda de RHU002N06 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |