No | Part number | Description ( Function ) | Manufacturers | |
1 | RGT8NS65D | Field Stop Trench IGBT RGT8NS65D 650V 4A Field Stop Trench IGBT Data Sheet VCES IC(100°C) VCE(sat) (Typ.) PD 650V 4A 1.65V 65W lFeatures 1) Low Collector - Emitter Saturation Voltage 2) Low Switching Loss 3) Short Circuit Withstand Time 5μs 4) Built in Very Fast & Soft Recovery FRD (RFN - Series) lOutline LPDS (TO-263S) (2) (1) (3) lInner Circuit (2) *1 (1) (3) (1) Gate (2) Collector (3) |
ROHM Semiconductor |
0  1  2  3  4  5  6  7  8 9 |
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