No | Part number | Description ( Function ) | Manufacturers | |
4 | RFL1N10 | 1A/ 80V and 100V/ 1.200 Ohm/ N-Channel/ Power MOSFETs Semiconductor RFL1N08, RFL1N10 1A, 80V and 100V, 1.200 Ohm, N-Channel, Power MOSFETs Description These are N-channel enhancement mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate-dr |
Intersil Corporation |
|
3 | RFL1N10 | 1A 80V AND 100V 1.200 OHM N-CHANNEL POWER MOSFETS |
New Jersey Semiconductor |
|
2 | RFL1N10L | 1A/ 100V/ 1.200 Ohm/ Logic Level/ N-Channel Power MOSFET RFL1N10L September 1998 1A, 100V, 1.200 Ohm, Logic Level, N-Channel Power MOSFET Description This is an N-Channel enhancement mode silicon gate power field effect transistor specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished through |
Intersil Corporation |
|
1 | RFL1N10L | 1A 80V AND 100V 1.200 OHM N-CHANNEL POWER MOSFETS |
New Jersey Semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |