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Datasheet RFHA1000 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | RFHA1000 | 15W GaN WIDE-BAND POWER AMPLIFIER www.DataSheet.co.kr
RFHA1000 50MHz to 1000MHz, 15 W GaN Wideband Power Amplifier
RFHA1000
50MHz TO 1000MHz, 15W GaN WIDEBAND POWER AMPLIFIER
Package: AlN Leadless Chip Carrier / SO8
Features
VGS Pin 1
Advanced GaN HEMT Technology Output Power of 15W Advanced Heat-Sink Technology |  RF Micro Devices | amplifier |
RFH Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | RFH10N45 | 10A/ 450V and 500V/ 0.600 Ohm/ N-Channel Power MOSFETs RFH10N45, RFH10N50
Semiconductor
Data Sheet
October 1998
File Number 1629.2
10A, 450V and 500V, 0.600 Ohm, N-Channel Power MOSFETs
Features
• 10A, 450V and 500V
[ /Title These are N-Channel enhancement mode silicon gate • rDS(ON) = 0.600Ω (RFH10 power field effect transistors designed f  Intersil Corporation mosfet | | |
| 2 | RFH10N50 | 10A/ 450V and 500V/ 0.600 Ohm/ N-Channel Power MOSFETs RFH10N45, RFH10N50
Semiconductor
Data Sheet
October 1998
File Number 1629.2
10A, 450V and 500V, 0.600 Ohm, N-Channel Power MOSFETs
Features
• 10A, 450V and 500V
[ /Title These are N-Channel enhancement mode silicon gate • rDS(ON) = 0.600Ω (RFH10 power field effect transistors designed f Intersil Corporation mosfet | | |
| 3 | RFH12N35 | 12A/ 350V and 400V/ 0.380 Ohm/ N-Channel Power MOSFETs RFH12N35, RFH12N40
Data Sheet October 1998 File Number 1630.2
12A, 350V and 400V, 0.380 Ohm, N-Channel Power MOSFETs
These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay d Intersil Corporation mosfet | | |
| 4 | RFH12N40 | 12A/ 350V and 400V/ 0.380 Ohm/ N-Channel Power MOSFETs RFH12N35, RFH12N40
Data Sheet October 1998 File Number 1630.2
12A, 350V and 400V, 0.380 Ohm, N-Channel Power MOSFETs
These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay d Intersil Corporation mosfet | | |
| 5 | RFH25P08 | -25A/ -100V and -80V/ 0.150 Ohm/ P-Channel Power MOSFETs Semiconductor
RFH25P08, RFH25P10, RFK25P08, RFK25P10
-25A, -100V and -80V, 0.150 Ohm, P-Channel Power MOSFETs
Description
These are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, re Intersil Corporation mosfet | | |
| 6 | RFH25P08 | P-Channel Power MOSFETs Semiconductor
RFH25P08, RFH25P10, RFK25P08, RFK25P10
-25A, -100V and -80V, 0.150 Ohm, P-Channel Power MOSFETs
Description
These are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, re  Harris mosfet | | |
| 7 | RFH25P10 | -25A/ -100V and -80V/ 0.150 Ohm/ P-Channel Power MOSFETs Semiconductor
RFH25P08, RFH25P10, RFK25P08, RFK25P10
-25A, -100V and -80V, 0.150 Ohm, P-Channel Power MOSFETs
Description
These are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, re Intersil Corporation mosfet | |
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