|
|
Datasheet RF5511 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | RF5511 | SWITCH AND LNA FRONT END SOLUTION Proposed
RF5511
3.3V, SWITCH AND LNA FRONT END SOLUTION
Package Style: FLIP CHIP, 11 PIN, 1x1x0.4mm
Features Single Die Front End Solution Single Supply Voltage 3.0V to
4.5 V Integrated SP3T Switch and
LNA with Bypass Typical gain is 11dB and
1.9dB NF in RX Mode Pin-toPin
Applications |  RF Micro Devices | data |
| 2 | RF5511 | 11B/G WLAN SP3T Switch
RFMD.
®
Switch and Switch + LNA Front End Solutions
Designed specifically for high-performance WiFi applications in the 2.4 GHz to 2.5 GHz ISM band, the RF5501 MMIC and RF5511 flip-chip MMIC address the need for size reduction for a typical IEEE 802.11b/g/n front end design. F | RF Micro Devices | data |
RF5 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | RF500M | Radio Modem RF500M Radio Modem
Revision: 8/10
Copyright © 2008-2010 Campbell Scientific, Inc.
PLEASE READ FIRST
About this manual
Please note that this manual was originally produced by Campbell Scientific Inc. (CSI) primarily for the US market. Some spellings, weights and measures may reflect this origin.
 Campbell Scientific data | | |
| 2 | RF501 | Fast recovery Diodes
RF
Diodes
1series
Fast recovery Diodes (Silicon Epitaxial Planar)
RF 1 series
zExternal dimensions (Unit : mm)
CPD
1.5
5.5 2.3 0.5
zApplications High frequency rectification
zFeatures 1) Ultra low VF very fast recovery 2) Fast recovery 3) Low switching loss 4) Standard packa  ROHM Semiconductor diode | | |
| 3 | RF501B2S | Fast Recovery Diode
Fast Recovery Diode
RF501B2S
zApplications General rectification zDimensions（Unit : mm ）
zLand size figure(Unit : mm) 6.0
zFeatures 1)Power mold type.(CPD) 2)High reliability 3)Low Vf 4)Very fast recovery 5)Low switching loss zConstruction Silicon epitaxial planer
1.6
1.6 ROHM Semiconductor diode | | |
| 4 | RF501BM2S | Super Fast Recovery Diode Super Fast Recovery Diode
RF501BM2S
Data Sheet
lSerise Standard Fast Recovery
lDimensions (Unit : mm)
lLand Size Figure (Unit : mm)
6.0
3.0 2.0 6.0
lApplication General rectification
lFeatures 1) Low switching loss 2) Low forward voltage
lConstruction Silicon epitaxial planar type
1
ROHM : T ROHM Semiconductor diode | | |
| 5 | RF501BM2SFH | Super Fast Recovery Diode Super Fast Recovery Diode
RF501BM2SFH
Datasheet
Series Standard Fast Recovery
Dimensions (Unit : mm)
AEC-Q101 Qualified Land Size Figure (Unit : mm)
6.0
3.0 2.0 6.0
Application General rectification
Features 1) Low switching loss 2) Low forward voltage
Construction Silicon e ROHM Semiconductor diode | | |
| 6 | RF505B6S | Super Fast Recovery Diode
Super Fast Recovery Diode
RF505B6S
Series Standard Fast Recovery Dimensions（Unit : mm） Land size figure (Unit : mm)
6.0
Applications General rectification
(2) 1.6 1.6 (3) 2.3 2.3
Features 1)Power mold type.（CPD） 2)High switching speed 3)Low Reverse ROHM Semiconductor diode | | |
| 7 | RF505BM6S | Super Fast Recovery Diode Super Fast Recovery Diode
RF505BM6S
Data Sheet
lSerise Standard Fast Recovery
lDimensions (Unit : mm)
lLand Size Figure (Unit : mm)
6.0
3.0 2.0 6.0
lApplication General rectification
1
lFeatures 1) Low switching loss 2) Low forward voltage 3) High current overload capacity
ROHM : TO-252 JEI ROHM Semiconductor diode | |
| Esta página es del resultado de búsqueda del RF5511. Si pulsa el resultado de búsqueda de RF5511 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |