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RF3315 PDF Datasheet

The RF3315 is Roadband High Linearity Amplifier. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 RF3315
ROADBAND HIGH LINEARITY AMPLIFIER

RF3315 0 Pb-Free Product Typical Applications • Basestation Applications • Cellular and PCS Systems • WLL, W-CDMA Systems • Final PA for Low-Power Applications BROADBAND HIGH LINEARITY AMPLIFIER Product Description The RF3315 is a high-efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier packaged in a low-cost surface-mount package. This amplifier is ideal

RF Micro Devices
RF Micro Devices
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Recommended search results related to RF3315

Part No Description ( Function) Manufacturers PDF
AUIRF3315S   Power MOSFET ( Transistor )

  AUTOMOTIVE GRADE AUIRF3315S Features  Advanced Planar Technology  Low On-Resistance  Dynamic dV/dT Rating  175°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Au

Infineon
Infineon
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AUIRF3315S   Power MOSFET ( Transistor )

PD - 97733 AUTOMOTIVE GRADE Features l l l l l l l Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating HEXFET® Power MOSFET D AUIRF3315S 150V 82m 21A 175°C Operating Temperature Fast Switching Fully Avalanche Rated G S l l Repetitive Avalanche Allowed

International Rectifier
International Rectifier
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IRF3315   Power MOSFET(Vdss=150V/ Rds(on)=0.07ohm/ Id=27A)

PD -91623A APPROVED l l l l l IRF3315 D HEXFET® Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 150V G S RDS(on) = 0.07Ω ID = 27A Description Fifth Generation HEXFETs from Internationa

International Rectifier
International Rectifier
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IRF3315L   Power MOSFET(Vdss=150V/ Rds(on)=0.082ohm/ Id=21A)

PD - 9.1617A PRELIMINARY l l l l l l IRF3315S/L HEXFET® Power MOSFET D Advanced Process Technology Surface Mount (IRF3315S) Low-profile through-hole (IRF3315L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 150V G S RDS(on) = 0.082Ω ID = 21A Des

International Rectifier
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IRF3315L   Trans MOSFET N-CH 150V 21A 3-Pin(3+Tab) TO-262

New Jersey Semiconductor
New Jersey Semiconductor
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