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RF2103PPCBA PDF Datasheet

The RF2103PPCBA is Medium Power Linear Amplifier. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 RF2103PPCBA
MEDIUM POWER LINEAR AMPLIFIER

RF2103P 2 Typical Applications • Digital Communication Systems • Portable Battery-Powered Equipment • Spread-Spectrum Communication Systems • Commercial and Consumer Systems • Driver for Higher Power Linear Applications • Base Station Equipment MEDIUM POWER LINEAR AMPLIFIER 2 POWER AMPLIFIERS Product Description The RF2103P is a medium power linear amplifier IC. T

RF Micro Devices
RF Micro Devices
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Recommended search results related to RF2103PPCBA

Part No Description ( Function) Manufacturers PDF
MRF21030LR3   RF Power Field Effect Transistors

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF21030/D The RF MOSFET Line RF Power Field Effect Transistors Designed for PCN and PCS base station applications with frequencies from 2.0 to 2.2 GHz. Suitable for FM, TDMA, CDMA and

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MRF21030LSR3   RF Power Field Effect Transistors

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF21030/D The RF MOSFET Line RF Power Field Effect Transistors Designed for PCN and PCS base station applications with frequencies from 2.0 to 2.2 GHz. Suitable for FM, TDMA, CDMA and

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MRF21030R3   RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENANCEMENT- MODE LATERAL MOSFETS

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF21030/D The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 2.0 to 2.2 GHz. Suitable for FM

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MRF21030SR3   RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENANCEMENT- MODE LATERAL MOSFETS

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF21030/D The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 2.0 to 2.2 GHz. Suitable for FM

Motorola Semiconductors
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RF2103P   MEDIUM POWER LINEAR AMPLIFIER

RF2103P 2 Typical Applications • Digital Communication Systems • Portable Battery-Powered Equipment • Spread-Spectrum Communication Systems • Commercial and Consumer Systems • Driver for Higher Power Linear Applications • Base Station Equipment MEDIUM POWER LINEAR AMP

RF Micro Devices
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