|
|
Datasheet RF1S630SM Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | RF1S630SM | 9A/ 200V/ 0.400 Ohm/ N-Channel Power MOSFETs IRF630, RF1S630SM
Data Sheet June 1999 File Number
1578.2
9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the |
 Intersil Corporation |
 |
| 1 | RF1S630SM | N-Channel Power MOSFETs Data Sheet
IRF630, RF1S630SM
January 2002
9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalan |
 Fairchild Semiconductor |
|
| Esta página es del resultado de búsqueda del RF1S630SM. Si pulsa el resultado de búsqueda de RF1S630SM se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Enlace url :
[1]
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |