No | Part number | Description ( Function ) | Manufacturers | |
2 | RF1S60P03SM | 60A/ 30V/ Avalanche Rated/ P-Channel Enhancement-Mode Power MOSFETs S E M I C O N D U C T O R RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM 60A, 30V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs Packages JEDEC STYLE TO-247 SOURCE DRAIN GATE December 1995 Features • 60A, 30V • rDS(ON) = 0.027Ω • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • +175oC Operating Temperature |
Fairchild Semiconductor |
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1 | RF1S60P03SM | 60A/ 30V/ 0.027 Ohm/ P-Channel Power MOSFETs RFG60P03, RFP60P03, RF1S60P03SM Data Sheet July 1999 File Number 3951.3 60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs These P-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use i |
Intersil Corporation |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |