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RF1S50N06 PDF Datasheet

The RF1S50N06 is Avalanche Rated N-channel Enhancement-mode Power MOSFETs. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

Searched Lists

No Part number Description ( Function ) Manufacturers PDF
5 RF1S50N06
Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs

SEMICONDUCTOR RFG50N06, RFP50N06, RF1S50N06, RF1S50N06SM December 1995 50A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs Features • 50A, 60V • rDS(ON) = 0.022Ω • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • +175oC Operating Temperature Description Packages DRAIN (BOTTOM SIDE METAL) JEDEC STYL

Harris
Harris
pdf
4 RF1S50N06LESM
50A/ 60V/ 0.022 Ohm/ Logic Level N-Channel Power MOSFETs

RFG50N06LE, RFP50N06LE, RF1S50N06LESM Data Sheet October 1999 File Number 4072.3 50A, 60V, 0.022 Ohm, Logic Level N-Channel Power MOSFETs These N-Channel enhancement mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in o

Intersil Corporation
Intersil Corporation
pdf
3 RF1S50N06SM
50A/ 60V/ 0.022 Ohm/ N-Channel Power MOSFETs

RFG50N06, RFP50N06, RF1S50N06SM Data Sheet January 2002 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications s

Fairchild Semiconductor
Fairchild Semiconductor
pdf
2 RF1S50N06SM
50A/ 60V/ 0.022 Ohm/ N-Channel Power MOSFETs

RFG50N06, RFP50N06, RF1S50N06SM Data Sheet July 1999 File Number 3575.4 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use i

Intersil Corporation
Intersil Corporation
pdf
1 RF1S50N06SM
Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs

SEMICONDUCTOR RFG50N06, RFP50N06, RF1S50N06, RF1S50N06SM December 1995 50A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs Features • 50A, 60V • rDS(ON) = 0.022Ω • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • +175oC Operating Temperature Description Packages DRAIN (BOTTOM SIDE METAL) JEDEC STYL

Harris
Harris
pdf

[1]    

List of most widely used semiconductors

Part Number Function Manufacturers PDF
1N4007

The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

Vishay Semiconductor
Vishay
pdf
LM317

This is a popular adjustable voltage regulator.
( 1.2V to 37V)

On Semiconductor
ON Semiconductor
pdf

 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

   1N5818   |   LM324N    |   A1015   |   SMAJ20CA  


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