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RDX060N60 PDF Datasheet

The RDX060N60 is 10V Drive Nch Mos Fet. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 RDX060N60
10V Drive Nch MOS FET

RDX060N60 Transistors 10V Drive Nch MOS FET RDX060N60 zStructure Silicon N-channel MOS FET zExternal dimensions (Unit : mm) TO-220FM 10.0 φ3.2 4.5 2.8 14.0 zFeatures 1) Low on-resistance. 2) Low input capacitance. 3) Excellent resistance to damage from static electricity. (1)Gate 15.0 12.0 8.0 2.5 1.3 1.2 0.8 2.54 (1) (2) (3) 2.54 0.75 2.6 z

ROHM Semiconductor
ROHM Semiconductor
pdf

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C3D06060A Silicon Carbide Schottky Diode VRRM = 600 V Z-Rec™ Rectifier Features Package IF (TC=135˚C) = 8.5 A Qc = 16 nC • • • • • • • 600-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Freque

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C3D06060G   Silicon Carbide Schottky Diode

C3D06060G ® Silicon Carbide Schottky Diode VRRM = Qc = 600 V Z-Rec Rectifier Features IF (TC=135˚C) = 9.5 A 16 nC Package • • • • • • • 600-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Freque

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