No | Part number | Description ( Function ) | Manufacturers | |
1 | RDX060N60 | 10V Drive Nch MOS FET RDX060N60 Transistors 10V Drive Nch MOS FET RDX060N60 zStructure Silicon N-channel MOS FET zExternal dimensions (Unit : mm) TO-220FM 10.0 φ3.2 4.5 2.8 14.0 zFeatures 1) Low on-resistance. 2) Low input capacitance. 3) Excellent resistance to damage from static electricity. (1)Gate 15.0 12.0 8.0 2.5 1.3 1.2 0.8 2.54 (1) (2) (3) 2.54 0.75 2.6 z |
ROHM Semiconductor |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to RDX060N60 |
Part No | Description ( Function) | Manufacturers | |
C3D06060A | Silicon Carbide Schottky Diode C3D06060A Silicon Carbide Schottky Diode VRRM = 600 V Z-Rec™ Rectifier Features Package IF (TC=135˚C) = 8.5 A Qc = 16 nC • • • • • • • 600-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Freque |
Cree |
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C3D06060F | Silicon Carbide Schottky Diode C3D06060F Silicon Carbide Schottky Diode VRRM = 600 V Z-Rec™ Rectifier (Full-Pak) Features Package IF (TC=58˚C) = 6 A Qc = 16 nC • • • • • • • • 600-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage Hig |
Cree |
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C3D06060G | Silicon Carbide Schottky Diode C3D06060G ® Silicon Carbide Schottky Diode VRRM = Qc = 600 V Z-Rec Rectifier Features IF (TC=135˚C) = 9.5 A 16 nC Package • • • • • • • 600-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Freque |
Cree |
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CSD06060 | ZERO RECOVERY RECTIFIER |
ETC |
|
CSD06060A | ZERO RECOVERY RECTIFIER |
ETC |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |