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Datasheet RBQ30T45ANZ Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | RBQ30T45ANZ | Schottky Barrier Diode Schottky Barrier Diode
RBQ30T45ANZ
lApplication General rectification
lFeatures 1) Cathode common type. 2) Low IR 3) High reliability
lConstruction Silicon epitaxial planar
lDimensions (Unit : mm)
10.0±0.3 0.1
4.5±0.3 0.1
2.8±0.2 0.1
5.0±0.2 8.0±0.2 12.0±0.2
1 |  ROHM Semiconductor | diode |
RBQ Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | RBQ10B45A | Schottky Barrier Diode Data Sheet
Schottky Barrier Diode
RBQ10B45A
lApplications General rectification lDimensions (Unit : mm)
6.5±0.2 2.3±0.2 0.1
lLand size figure (Unit : mm) 6.0
0.5±0.1
C0.5
5.1±0.2 0.1
1.6
① 0.8 min 0.75 0.65±0.1 2.5 9.5±0.5
1.6
3)High reliability
0.9 （1） （2） （3）
CPD
2.3 ROHM Semiconductor diode | | |
| 2 | RBQ10B65A | Schottky Barrier Diode Data Sheet
Schottky Barrier Diode
RBQ10B65A
Applications General rectification Dimensions (Unit : mm)
6.5±0.2 C0.5 1.5±0.3 2.3±0.2 0.1 0.5±0.1 5.1±0.2 0.1
Land size figure (Unit : mm)
6.0
5.5±0.3 0.1
0.8 min 0.9 （1） （2） （3） 2.3±0.2 2.3±0.2 0.75 0.65±0.1 2.5
3)H ROHM Semiconductor diode | | |
| 3 | RBQ10BM45A | Schottky Barrier Diode Schottky Barrier Diode
RBQ10BM45A
lApplication General rectification
lDimensions (Unit : mm)
Data Sheet
lLand size figure (Unit : mm)
6.0
3.0 2.0 6.0
lFeatures 1) Power mold type (TO-252) 2) Cathode common dual type 3) High reliability 4) Low IR
12
1.6 1.6
TO-252
2.3 2.3
ROHM : TO-252 JEIT ROHM Semiconductor diode | | |
| 4 | RBQ10BM65A | Schottky Barrier Diode Schottky Barrier Diode
RBQ10BM65A
lApplication General rectification
lDimensions (Unit : mm)
Data Sheet
lLand size figure (Unit : mm)
6.0
3.0 2.0 6.0
lFeatures 1) Power mold type (TO-252) 2) Cathode common dual type 3) High reliability 4) Low IR
12
1.6 1.6
TO-252
2.3 2.3
ROHM : TO-252 JEIT ROHM Semiconductor diode | | |
| 5 | RBQ10NS45A | Schottky Barrier Diode Data Sheet
Schottky Barrier Diode
RBQ10NS45A
lApplications General rectification lDimensions（Unit : mm） lLand size figure (Unit : mm)
lFeatures 1)Cathode Common Dual type.(LPDS) 2)Low IR.
BQ10NS 45A
①
lConstruction Silicon epitaxial planer
ROHM : LPDS JEITA : TO263S ① Manufacture Year, W ROHM Semiconductor diode | | |
| 6 | RBQ10NS65A | Schottky Barrier Diode Data Sheet
Schottky Barrier Diode
RBQ10NS65A
lApplications General rectification lDimensions(Unit : mm) lLand size figure (Unit : mm)
lGeneral rectification 1)Cathode Common Dual type.（LPDS） 2)Low IR.
BQ10NS 65A ①
lConstruction Silicon epitaxial planer
ROHM : LPDS JEITA : TO263S ① Manuf ROHM Semiconductor diode | | |
| 7 | RBQ10T45A | Schottky Barrier Diode Data Sheet
Schottky Barrier Diode
RBQ10T45A
lApplications General rectification lDimensions (Unit : mm)
4.5±0.3 0.1 10.0±0.3 0.1 2.8±0.2 0.1
lStructure
①
1.3 0.8 (1) (2) (3)
13.5MIN
lConstruction Silicon epitaxial planer
1.2
5.0±0.2
8.0±0.2 12.0±0.2
15 ROHM Semiconductor diode | |
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