No | Part number | Description ( Function ) | Manufacturers | |
1 | R6020ANZ | Drive Nch MOSFET Data Sheet 10V Drive Nch MOSFET R6020ANZ Structure Silicon N-channel MOSFET Dimensions (Unit : mm) TO-3PF 4.5 5.5 15.5 φ3.6 10.0 3.0 0.75 Application Switching (1) Gate (2) Drain (3) Source 14.8 (1) (2) 2.5 Features 1) Low on-resistance. 2) Low input capacitance. 3) High ESD. 26.5 16.5 14.5 0.44 16.5 3.5 2.0 2.0 3.0 2.0 (3) 0.9 5.45 5.45 |
ROHM Semiconductor |
0  1  2  3  4  5  6  7  8 9 |
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MBR6020 | (MBR6020 - MBR60100) SCHOTTKY DIODES Transys Electronics L I M I T E D MBR6020(R) THRU MBR60100(R) SCHOTTKY DIODES STUD TYPE 60 A 60Amp Rectifier 20-100 Volts Features High Surge Capability Types up to100V V RRM DO-5 Maximum Ratings Operating Temperature: -65 C to +150 N B Storage Tempera |
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Naina Semiconductor |
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MBR6020 | (MBR6020 - MBR6040R) Silicon Power Schottky Diode Free Datasheet http://www.datasheet4u.net/ Free Datasheet http://www.datasheet4u.net/ |
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MBR60200CT | Power Schottky Rectifier ELECTRONIC MBR60200CT/FCT/PT Power Schottky Rectifier - 60Amp 200Volt □ Features -Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 -High Junction Temperature Capability -Low forward voltage, high current capability -High surge capacity -Low powe |
SIRECT |
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Vishay |
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