No | Part number | Description ( Function ) | Manufacturers | |
1 | R2248 | PHOTOMULTlPLlER TUBE PHOTOMULTIPLIER TUBE R2248 10mm × 10mm Square Envelope, Head-On Type 8-Stage, Bialkali Photocathode GENERAL Parameter Spectral Response Wavelength of Maximum Response Material Photocathode Minimum Useful Area Window Material Structure Dynode Number of Stages Base Weight Suitable Socket Description/Value 300 to 650 420 Bialkali 8×8 Borosilicate glass Linear focused 8 11-pin g |
Hamamatsu Corporation |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to R2248 |
Part No | Description ( Function) | Manufacturers | |
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2SC2248 | Power Transistor INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2248 DESCRIPTION ·High Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V (Min) ·High Switching Speed APPLICATIONS ·Power switching ·Power amplification ·Power dr |
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2SD2248 | Silicon NPN Epitaxial Type TRANSISTOR 2SD2248 Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington power transistor) 2SD2248 Hammer Drive, Pulse Motor Drive Applications For Inductive Load Drive Unit: mm · High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) · Low saturation voltage: VCE |
Toshiba Semiconductor |
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1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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ON Semiconductor |
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