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Datasheet R1RW0416DGE-2LR Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1R1RW0416DGE-2LR4M High Speed SRAM

R1RW0416D Series 4M High Speed SRAM (256-kword × 16-bit) REJ03C0107-0100Z Rev. 1.00 Mar.12.2004 Description The R1RW0416D is a 4-Mbit high speed static RAM organized 256-kword × 16-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circ
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R1R Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1R1RP0404D4M High Speed SRAM

R1RP0404D Series 4M High Speed SRAM (1-Mword × 4-bit) REJ03C0116-0100Z Rev. 1.00 Mar.12.2004 Description The R1RP0404D is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit de
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2R1RP0404DGE-2LR4M High Speed SRAM

R1RP0404D Series 4M High Speed SRAM (1-Mword × 4-bit) REJ03C0116-0100Z Rev. 1.00 Mar.12.2004 Description The R1RP0404D is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit de
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3R1RP0404DGE-2PR4M High Speed SRAM

R1RP0404D Series 4M High Speed SRAM (1-Mword × 4-bit) REJ03C0116-0100Z Rev. 1.00 Mar.12.2004 Description The R1RP0404D is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit de
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4R1RP0408D4M High Speed SRAM

R1RP0408D Series 4M High Speed SRAM (512-kword × 8-bit) REJ03C0112-0200 Rev. 2.00 Dec.1.2008 Description The R1RP0408D Series is a 4-Mbit high speed static RAM organized 512-k word × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed
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5R1RP0408DGE-0PR4M High Speed SRAM

R1RP0408D Series 4M High Speed SRAM (512-kword × 8-bit) REJ03C0112-0200 Rev. 2.00 Dec.1.2008 Description The R1RP0408D Series is a 4-Mbit high speed static RAM organized 512-k word × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed
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6R1RP0408DGE-2LR4M High Speed SRAM

R1RP0408D Series 4M High Speed SRAM (512-kword × 8-bit) REJ03C0112-0200 Rev. 2.00 Dec.1.2008 Description The R1RP0408D Series is a 4-Mbit high speed static RAM organized 512-k word × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed
Renesas
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7R1RP0408DGE-2PR4M High Speed SRAM

R1RP0408D Series 4M High Speed SRAM (512-kword × 8-bit) REJ03C0112-0200 Rev. 2.00 Dec.1.2008 Description The R1RP0408D Series is a 4-Mbit high speed static RAM organized 512-k word × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed
Renesas
Renesas		ram



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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