No | Part number | Description ( Function ) | Manufacturers | |
1 | QM100HY-H | HIGH POWER SWITCHING USE INSULATED TYPE MITSUBISHI TRANSISTOR MODULES QM100HY-H HIGH POWER SWITCHING USE INSULATED TYPE QM100HY-H • • • • • IC Collector current ........................ 100A VCEX Collector-emitter voltage ........... 600V hFE DC current gain............................... 75 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION Inverters, Servo drives, DC |
Mitsubishi Electric Semiconductor |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to QM100HY-H |
Part No | Description ( Function) | Manufacturers | |
QM100 | HIGH POWER SWITCHING USE INSULATED TYPE MITSUBISHI TRANSISTOR MODULES QM100TX1-HB HIGH POWER SWITCHING USE INSULATED TYPE QM100TX1-HB • • • • • IC Collector current ........................ 100A VCEX Collector-emitter voltage ........... 600V hFE DC current gain............................. 750 Insulated |
Mitsubishi Electric Semiconductor |
|
QM100 | HIGH POWER SWITCHING USE INSULATED TYPE MITSUBISHI TRANSISTOR MODULES QM100TX1-HB HIGH POWER SWITCHING USE INSULATED TYPE QM100TX1-HB • • • • • IC Collector current ........................ 100A VCEX Collector-emitter voltage ........... 600V hFE DC current gain............................. 750 Insulated |
Mitsubishi Electric Semiconductor |
|
QM100 | HIGH POWER SWITCHING USE INSULATED TYPE MITSUBISHI TRANSISTOR MODULES QM100TX1-HB HIGH POWER SWITCHING USE INSULATED TYPE QM100TX1-HB • • • • • IC Collector current ........................ 100A VCEX Collector-emitter voltage ........... 600V hFE DC current gain............................. 750 Insulated |
Mitsubishi Electric Semiconductor |
|
QM1000HA-24B | HIGH POWER SWITCHING USE INSULATED TYPE MITSUBISHI TRANSISTOR MODULES QM1000HA-24B HIGH POWER SWITCHING USE INSULATED TYPE QM1000HA-24B • • • • • IC Collector current ...................... 1000A VCEX Collector-emitter voltage ......... 1200V hFE DC current gain............................. 750 Insulated |
Mitsubishi Electric Semiconductor |
|
QM1000HA-2HB | HIGH POWER SWITCHING USE INSULATED TYPE MITSUBISHI TRANSISTOR MODULES QM1000HA-2HB HIGH POWER SWITCHING USE INSULATED TYPE QM1000HA-2HB • • • • • IC Collector current ...................... 1000A VCEX Collector-emitter voltage ......... 1000V hFE DC current gain............................. 750 Insulated |
Mitsubishi Electric Semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |