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Datasheet QL8325 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | QL8325 | LOW POWER FPGA COMBINING PERFORMANCE DENSITY AND EMBEDED RAM (FOLSVH,, )DPLO\ 'DWD 6KHHW
/RZ 3RZHU )3*$ &RPELQLQJ 3HUIRUPDQFH 'HQVLW\ DQG (PEHGGHG 5$0
'HYLFH +LJKOLJKWV
)OH[LEOH 3URJUDPPDEOH /RJLF
0.18 µ, six layer metal CMOS process 1.8 V Vcc, 1.8/2.5/3.3 V drive capable I/O Up to 4,008 dedicated flip-flops Up to 55.3 K embedded |  ETC | data |
QL8 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | QL8025 | LOW POWER FPGA COMBINING PERFORMANCE DENSITY AND EMBEDED RAM (FOLSVH,, )DPLO\ 'DWD 6KHHW
/RZ 3RZHU )3*$ &RPELQLQJ 3HUIRUPDQFH 'HQVLW\ DQG (PEHGGHG 5$0
'HYLFH +LJKOLJKWV
)OH[LEOH 3URJUDPPDEOH /RJLF
0.18 µ, six layer metal CMOS process 1.8 V Vcc, 1.8/2.5/3.3 V drive capable I/O Up to 4,008 dedicated flip-flops Up to 55.3 K embedded ETC data | | |
| 2 | QL8050 | LOW POWER FPGA COMBINING PERFORMANCE DENSITY AND EMBEDED RAM (FOLSVH,, )DPLO\ 'DWD 6KHHW
/RZ 3RZHU )3*$ &RPELQLQJ 3HUIRUPDQFH 'HQVLW\ DQG (PEHGGHG 5$0
'HYLFH +LJKOLJKWV
)OH[LEOH 3URJUDPPDEOH /RJLF
0.18 µ, six layer metal CMOS process 1.8 V Vcc, 1.8/2.5/3.3 V drive capable I/O Up to 4,008 dedicated flip-flops Up to 55.3 K embedded ETC data | | |
| 3 | QL8150 | LOW POWER FPGA COMBINING PERFORMANCE DENSITY AND EMBEDED RAM (FOLSVH,, )DPLO\ 'DWD 6KHHW
/RZ 3RZHU )3*$ &RPELQLQJ 3HUIRUPDQFH 'HQVLW\ DQG (PEHGGHG 5$0
'HYLFH +LJKOLJKWV
)OH[LEOH 3URJUDPPDEOH /RJLF
0.18 µ, six layer metal CMOS process 1.8 V Vcc, 1.8/2.5/3.3 V drive capable I/O Up to 4,008 dedicated flip-flops Up to 55.3 K embedded ETC data | | |
| 4 | QL8250 | LOW POWER FPGA COMBINING PERFORMANCE DENSITY AND EMBEDED RAM (FOLSVH,, )DPLO\ 'DWD 6KHHW
/RZ 3RZHU )3*$ &RPELQLQJ 3HUIRUPDQFH 'HQVLW\ DQG (PEHGGHG 5$0
'HYLFH +LJKOLJKWV
)OH[LEOH 3URJUDPPDEOH /RJLF
0.18 µ, six layer metal CMOS process 1.8 V Vcc, 1.8/2.5/3.3 V drive capable I/O Up to 4,008 dedicated flip-flops Up to 55.3 K embedded ETC data | | |
| 5 | QL8325 | LOW POWER FPGA COMBINING PERFORMANCE DENSITY AND EMBEDED RAM (FOLSVH,, )DPLO\ 'DWD 6KHHW
/RZ 3RZHU )3*$ &RPELQLQJ 3HUIRUPDQFH 'HQVLW\ DQG (PEHGGHG 5$0
'HYLFH +LJKOLJKWV
)OH[LEOH 3URJUDPPDEOH /RJLF
0.18 µ, six layer metal CMOS process 1.8 V Vcc, 1.8/2.5/3.3 V drive capable I/O Up to 4,008 dedicated flip-flops Up to 55.3 K embedded ETC data | | |
| 6 | QL83I6S-A | LASER DIODE QSI LASER DIODE SPECIFICATIONS FOR APPROVAL
Customer :
Model : QL83I6S-A/B/C
Signature of Approval
Approved by Checked by Issued by
Approval by Customer
TENTATIVE
315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836
WWW.QSILaser.com
QL83I6S-A/B/C
AlGaAs Laser Diode
Quantum S  QSI diode | | |
| 7 | QL83I6S-B | LASER DIODE QSI LASER DIODE SPECIFICATIONS FOR APPROVAL
Customer :
Model : QL83I6S-A/B/C
Signature of Approval
Approved by Checked by Issued by
Approval by Customer
TENTATIVE
315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836
WWW.QSILaser.com
QL83I6S-A/B/C
AlGaAs Laser Diode
Quantum S QSI diode | |
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