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Datasheet Q62702-A120 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | Q62702-A120 | Silicon PIN Diodes (RF switch RF attenuator for frequencies above 10 MHz) Silicon PIN Diodes
BAR 60 BAR 61
q q
RF switch RF attenuator for frequencies above 10 MHz
Type BAR 60
Marking 60
Ordering Code (tape and reel) Q62702-A786
Pin Configuration
Package1) SOT-143
BAR 61
61
Q62702-A120
Maximum Ratings per Diode Parameter Reverse voltage Forward current Total p |
 Siemens Semiconductor Group |
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| 3 | Q62702-A1200 | Silicon Schottky Diodes (For mixer applications in the VHF / UHF range For high-speed switching applications) BAT 68-07W
Silicon Schottky Diodes • For mixer applications in the VHF / UHF range • For high-speed switching applications
3 4
2 1
VPS05605
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BAT 68-07W Marking Ordering Code 87 Q62702-A1200 Pin Configuration Packa |
Siemens Semiconductor Group |
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| 2 | Q62702-A1201 | NPN Silicon Switching Transistor Array SMBT 3904S
NPN Silicon Switching Transistor Array • High DC current gain: 0.1mA to 100mA • Low collector-emitter saturation voltage • Two ( galvanic) internal isolated Transistors with high matching in one package • Complementary type: SMBT 3906S (PNP)
4 5 6
2 1
3
VPS05604
Type SMBT 3904 |
Siemens Semiconductor Group |
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| 1 | Q62702-A1202 | PNP Silicon Switching Transistor Array SMBT 3906S
PNP Silicon Switching Transistor Array • High DC current gain: 0.1mA to 100mA • Low collector-emitter saturation voltage • Two ( galvanic) internal isolated Transistors with high matching in one package • Complementary type: SMBT 3904S (NPN)
4 5 6
2 1
3
VPS05604
Type SMBT 3906 |
Siemens Semiconductor Group |
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