| No | Part number | Description ( Function ) | Manufacturers | |
| 7 | PZT3906 | PNP switching transistor DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 PZT3906 PNP switching transistor Product specification Supersedes data of 1997 May 27 1999 Apr 14 Philips Semiconductors Product specification PNP switching transistor FEATURES • Low current (max. 100 mA) • Low voltage (max. 40 V). APPLICATIONS • High-speed switching. DESCRIPTION PNP switching transistor |
 NXP Semiconductors |
|
| 6 | PZT3906 | SMALL SIGNAL PNP TRANSISTOR ® PZT3906 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA Type PZT3906 s Marking 3906 s s s SILICON EPITAXIAL PLANAR PNP TRANSISTOR SOT-223 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE IS PZT3904 2 1 SOT-223 2 3 APPLICATIONS WELL SUITABLE FOR SMD MOTHER BOARD ASSEMBLY s SMALL LOAD SWITCH TRANSISTOR WITH HIGH GAIN AND LO |
 STMicroelectronics |
|
| 5 | PZT3906 | PNP Silicon Switching Transistor PNP Silicon Switching Transistor High DC current gain 0.1 mA to 100 mA q Low collector-emitter saturation voltage q Complementary type: PZT 3904 (NPN) q PZT 3906 Type PZT 3906 Marking ZT 3906 Ordering Code (tape and reel) Q62702-Z2030 Pin Configuration 1 2 3 4 B C E C Package1) SOT-223 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-bas |
 Siemens Semiconductor Group |
|
| 4 | PZT3906 | PNP General Purpose Amplifier 2N3906 / MMBT3906 / PZT3906 — PNP General-Purpose Amplifier April 2014 2N3906 / MMBT3906 / PZT3906 PNP General-Purpose Amplifier Description This device is designed for general-purpose amplifier and switching applications at collector currents of 10 mA to 100 mA. 2N3906 EBC TO-92 MMBT3906 C SOT-23 Mark:2A E B PZT3906 C SOT-223 E C B Ordering Information Part Numb |
 Fairchild Semiconductor |
|
| 3 | PZT3906 | Epitaxial Planar Transistor Elektronische Bauelemente Description The PZT3906 is designed for general purpose switching and amplifier applications. RoHS Compliant Product PZT3906 PNP Transistor Epitaxial Planar Transistor SOT-223 3906 REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0 10 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 Millimeter Min. Max. 13 TYP. 2.30 REF. 6.30 6.70 6.30 |
 SeCoS |
|
| 2 | PZT3906 | PNP Transistor RoHS PZT3906 PZT3906 TRANSISTOR (PNP) SOT-223 FEATURES DPower dissipation TPCM: 1 W (Tamb=25℃) Collector current .,LICM: -0.2 A Collector-base voltage V(BR)CBO: -40 V OOperating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 1. BASE 2. COLLECTOR 3. EMITTER CELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) ICParameter Collecto |
 WEJ |
|
List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
|
| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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