Datasheet PTF211301A Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	PTF211301A	LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz PTF211301 LDMOS RF Power Field Effect Transistor 130 W, 2110–2170 MHz Description The PTF211301 is a 130–W, internally matched GOLDMOS FET intended for WCDMA applications. It is characaterized for single– and two–carrier WCDMA operation from 2110 to 2170 MHz. Full gold metallization ensures	Infineon Technologies AG

PTF2113 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
PTF211301	LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz PTF211301 LDMOS RF Power Field Effect Transistor 130 W, 2110–2170 MHz Description The PTF211301 is a 130–W, internally matched GOLDMOS FET intended for WCDMA applications. It is characaterized for single– and two–carrier WCDMA operation from 2110 to 2170 MHz. Full gold m	Infineon Technologies AG
PTF211301A	LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz PTF211301 LDMOS RF Power Field Effect Transistor 130 W, 2110–2170 MHz Description The PTF211301 is a 130–W, internally matched GOLDMOS FET intended for WCDMA applications. It is characaterized for single– and two–carrier WCDMA operation from 2110 to 2170 MHz. Full gold m	Infineon Technologies AG

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Número de pieza	Descripción	Fabricantes	PDF
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