Datasheet PF0121 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	PF0121	MOS FET Power Amplifier Module for GSM Mobile Phone PF0121 MOS FET Power Amplifier Module for GSM Mobile Phone ADE-208-097A (Z) 2nd Edition July 1996 Application For GSM CLASS2 890 to 915 MHz Features • Low power control current: 0.9 mA Typ • High speed switching: 1.5 µsec Typ • Wide power control range: 100 dB Typ Pin Arrangement • RF-B2	Hitachi Semiconductor

PF0 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
PF0310	MOS FET Power Amplifier Module for VHF Band w w a D . w S a t e e h U 4 t m o .c w w .D w t a S a e h U 4 t e .c m o w w w .D a S a t e e h U 4 t m o .c	Hitachi Semiconductor
PF08114B	MOS FET Power Amplifier Module w w w t a .D S a e h U 4 t e .c m o w w w .D a S a t e e h U 4 t m o .c	Renesas
PF08122B	MOS FET Power Amplifier Module To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003	Renesas

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nuevas actualizaciones

Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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