|
|
Datasheet PE60 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 12 | PE60 | Diode ( Rectifier ) |
 American Microsemiconductor |
 |
| 11 | PE600BA | N-Channel Enhancement Mode MOSFET PE600BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 9.8mΩ @VGS = 10V
ID 32A
PDFN 3X3P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous |
 UNIKC |
|
| 10 | PE600SA | N-Channel Enhancement Mode MOSFET PE600SA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 12mΩ @VGS = 10V
ID 25A
PDFN 3X3P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
TC = 25 °C
|
UNIKC |
|
| 9 | PE601CA | P&N-Channel Enhancement Mode MOSFET PE601CA
N&P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS 30V -30V
RDS(ON) 22mΩ @VGS = 10V 28mΩ @VGS = -10V
ID 20A -19A
Channel N P
100% UIS Tested PDFN 3X3P 100% Rg Tested
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL CH. LIMIT |
UNIKC |
|
| Esta página es del resultado de búsqueda del PE60. Si pulsa el resultado de búsqueda de PE60 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Enlace url :
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |