PE4152 PDF Datasheet

PE4152 Document Category: Product Specification UltraCMOS® Quad MOSFET Mixer Features • Quad MOSFET array with integrated LO enable and bypass mode • Ultra high linearity in both LO modes ▪ LO enable: 25 dBm IIP3, 52 dBm IIP2 ▪ LO bypass: 24 dBm IIP3, 46 dBm IIP2 • High isolation in both LO modes ▪ LO enable: 30/30 dB LO–RF/IF ▪ LO bypass: 60/58 dB LO–RF/IF

1N4152 1N4152 DO-35 Color Band Denotes Cathode Small Signal Diode Absolute Maximum Ratings* Symbol VRRM IF(AV) IFSM TA = 25°C unless otherwise noted Parameter Maximum Repetitive Reverse Voltage Average Rectified Forward Current Non-repetitive Peak Forward Surge Current Pulse

1N914 THRU 1N4454 SILICON EPITAXIAL PLANAR DIODES Features Silicon Epitaxial Planar Diodes for general purpose and switching The types 1N4149, 1N4447 and 1N4449 are also available in glass case DO-34. D IM E N S IO N S D IM A B C D IM E N S IO N S D IM A B C D in c h e s M in .

CE CHENYI ELECTRONICS FEATURES . Silicon epitaxial planar diode . Fast swithching diodes . 1N4149, 1N4447, 1N4449 are also avaible in glass case DO-34 1N914 THRU 1N4454 SMALL SIGNAL SWITCHING DIODE MECHANICAL DATA . Case: DO-35 glass case . Polarity: Color brand denotes cathode