No | Part number | Description ( Function ) | Manufacturers | |
7 | PDTC123 | NPN resistor-equipped transistor DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTC123ET NPN resistor-equipped transistor Product specification Supersedes data of 1998 May 08 1999 May 21 Philips Semiconductors Product specification NPN resistor-equipped transistor FEATURES • Built-in bias resistors R1 and R2 (typ. 2.2 kΩ each) • Simplification of circuit design • Reduces number of co |
NXP Semiconductors |
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6 | PDTC123E | NPN resistor-equipped transistors DISCRETE SEMICONDUCTORS DATA SHEET PDTC123E series NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ Product specification Supersedes data of 2004 Mar 18 2004 Aug 06 Philips Semiconductors Product specification NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ FEATURES • Built-in bias resistors • Simplified circuit des |
NXP Semiconductors |
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5 | PDTC123ET | NPN resistor-equipped transistor DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTC123ET NPN resistor-equipped transistor Product specification Supersedes data of 1998 May 08 1999 May 21 Philips Semiconductors Product specification NPN resistor-equipped transistor FEATURES • Built-in bias resistors R1 and R2 (typ. 2.2 kΩ each) • Simplification of circuit design • Reduces number of co |
NXP Semiconductors |
|
4 | PDTC123JE | NPN resistor-equipped transistor DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC123JE NPN resistor-equipped transistor Product specification Supersedes data of 1998 Aug 03 1999 May 21 Philips Semiconductors Product specification NPN resistor-equipped transistor FEATURES • Built-in bias resistors R1 and R2 (typ. 2.2 and 47 kΩ respectively) • Simplification of circuit design • Reduces number of co |
NXP Semiconductors |
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3 | PDTC123JEF | NPN resistor-equipped transistor DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTC123JEF NPN resistor-equipped transistor Preliminary specification 1999 May 27 Philips Semiconductors Preliminary specification NPN resistor-equipped transistor FEATURES • Built-in bias resistors R1 and R2 (typ. 2.2 kΩ and 47 kΩ respectively) • Simplification of circuit design • Reduces number of components and boar |
NXP Semiconductors |
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2 | PDTC123JT | NPN resistor-equipped transistor DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTC123JT NPN resistor-equipped transistor Product specification Supersedes data of 1998 May 08 1999 May 18 Philips Semiconductors Product specification NPN resistor-equipped transistor FEATURES • Built-in bias resistors R1 and R2 (typ. 2.2 kΩ and 47 kΩ respectively) • Simplification of circuit design • |
NXP Semiconductors |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |