No | Part number | Description ( Function ) | Manufacturers | |
1 | PD3S120LQ | 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Green PD3S120LQ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER PowerDI®323 Product Summary VR IF (V) (A) 20 1.0 VF MAX (V) @ +25°C 0.42 IR MAX (mA) @ +25°C 0.16 Description and Applications This Schottky Barrier Rectifier has been designed to meet the stringent requirements of Automotive Applications. It is ideally suited to use as : • Polarity Protection Diode � |
Diodes |
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Recommended search results related to PD3S120LQ |
Part No | Description ( Function) | Manufacturers | |
PD3S120L | 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features • Guard Ring Die Construction for Transient Protection • High Surge Capability • Lead Free Finish, RoHS Compliant (Note 1) • "Green" Molding Compound (No Br, Sb) • Ultra-Small Surface Mount Package • Qualified to AEC-Q101 Standards for High Reliability PD3S1 |
Diodes Incorporated |
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2N3120 | Small Signal Transistors Small Signal Transistors TO-39 Case (Continued) TYPE NO. DESCRIPTION VCBO (V) VCEO (V) *VCER VEBO (V) ICBO @ VCB (µA) (V) *ICEO **ICES ***ICEV ****ICER MIN 5.0 5.0 5.0 5.0 5.0 5.0 4.0 5.0 5.0 5.0 5.0 5.0 5.0 7.0 7.0 5.0 4.0 7.0 7.0 7.0 7.0 5.0 4.0 4.0 5.0 4.0 4.0 4.0 5.0 5.0 5.0 |
Central |
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2SC3120 | TRANSISTOR (TV TUNER/ UHF MIXER/ VHF~UHF BAND RF AMPLIFIER APPLICATIONS) 2SC3120 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3120 TV Tuner, UHF Mixer Applications VHF~UHF Band RF Amplifier Applications Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector cur |
Toshiba Semiconductor |
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2SC3120 | Silicon NPN Epitaxial SMD Type Silicon NPN Epitaxial 2SC3120 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 Features +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Pa |
Kexin |
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2SK3120 | Ultrahigh-Speed Switching Applications Ordering number:ENN6103A N-Channel Silicon MOSFET 2SK3120 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · 4V drive. Package Dimensions unit:mm 2062A [2SK3120] 4.5 1.6 1.5 0.4 3 1.5 2 3.0 0.75 0.5 1 1.0 4.25max 2.5 0. |
Sanyo Semicon Device |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |