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PD3S120LQ PDF Datasheet

The PD3S120LQ is 1.0A Surface Mount Schottky Barrier Rectifier. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 PD3S120LQ
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

  Green PD3S120LQ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER PowerDI®323 Product Summary VR IF (V) (A) 20 1.0 VF MAX (V) @ +25°C 0.42 IR MAX (mA) @ +25°C 0.16 Description and Applications This Schottky Barrier Rectifier has been designed to meet the stringent requirements of Automotive Applications. It is ideally suited to use as : • Polarity Protection Diode �

Diodes
Diodes
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Recommended search results related to PD3S120LQ

Part No Description ( Function) Manufacturers PDF
PD3S120L   1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

Features • Guard Ring Die Construction for Transient Protection • High Surge Capability • Lead Free Finish, RoHS Compliant (Note 1) • "Green" Molding Compound (No Br, Sb) • Ultra-Small Surface Mount Package • Qualified to AEC-Q101 Standards for High Reliability PD3S1

Diodes Incorporated
Diodes Incorporated
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2N3120   Small Signal Transistors

Small Signal Transistors TO-39 Case (Continued) TYPE NO. DESCRIPTION VCBO (V) VCEO (V) *VCER VEBO (V) ICBO @ VCB (µA) (V) *ICEO **ICES ***ICEV ****ICER MIN 5.0 5.0 5.0 5.0 5.0 5.0 4.0 5.0 5.0 5.0 5.0 5.0 5.0 7.0 7.0 5.0 4.0 7.0 7.0 7.0 7.0 5.0 4.0 4.0 5.0 4.0 4.0 4.0 5.0 5.0 5.0

Central
Central
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2SC3120   TRANSISTOR (TV TUNER/ UHF MIXER/ VHF~UHF BAND RF AMPLIFIER APPLICATIONS)

2SC3120 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3120 TV Tuner, UHF Mixer Applications VHF~UHF Band RF Amplifier Applications Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector cur

Toshiba Semiconductor
Toshiba Semiconductor
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2SC3120   Silicon NPN Epitaxial

SMD Type Silicon NPN Epitaxial 2SC3120 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 Features +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Pa

Kexin
Kexin
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2SK3120   Ultrahigh-Speed Switching Applications

Ordering number:ENN6103A N-Channel Silicon MOSFET 2SK3120 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · 4V drive. Package Dimensions unit:mm 2062A [2SK3120] 4.5 1.6 1.5 0.4 3 1.5 2 3.0 0.75 0.5 1 1.0 4.25max 2.5 0.

Sanyo Semicon Device
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[1]    

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LM317

This is a popular adjustable voltage regulator.
( 1.2V to 37V)

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 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

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