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PBYR1020D PDF Datasheet

The PBYR1020D is Rectifier Diodes Schottky Barrier. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 PBYR1020D
Rectifier diodes Schottky barrier

Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES • Low forward volt drop • Fast switching • Reverse surge capability • High thermal cycling performance • Low thermal resistance PBYR1025D series SYMBOL QUICK REFERENCE DATA VR = 20 V/ 25 V k tab a 3 IF(AV) = 10 A VF ≤ 0.41 V GENERAL DESCRIPTION Schottky rectifier diodes

NXP Semiconductors
NXP Semiconductors
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Recommended search results related to PBYR1020D

Part No Description ( Function) Manufacturers PDF
PBYR1020CTD   Rectifier diodes Schottky barrier

Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES • Low forward volt drop • Fast switching • Reverse surge capability • High thermal cycling performance • Low thermal resistance PBYR1025CTD series SYMBOL QUICK REFERENCE DATA VR

NXP Semiconductors
NXP Semiconductors
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2SA1020   TRANSISTOR (POWER AMPLIFIER APPLICATIONS)

2SA1020 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1020 Power Amplifier Applications Power Switching Applications • • • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) High-speed switching: tstg = 1.0 µs (typ.) Complementary

Toshiba Semiconductor
Toshiba Semiconductor
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2SA1020   TO-92MOD Plastic-Encapsulated Transistors

Transys Electronics L I M I T E D TO-92MOD Plastic-Encapsulated Transistors 2SA1020 FEATURES Power dissipation PCM : 900 mW (Tamb=25℃) TRANSISTOR (PNP) TO-92MOD 1. EMITTER 2. COLLECTOR 3. BASE Collector current : -2 A ICM Collector-base voltage V V(BR)CBO : -50 Operating an

ETC
ETC
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2SA1020   PNP EPITAXIAL SILICON TRANSISTOR

UTC 2SA1020 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SA1020 is designed for power amplifier and power switching applications. 1 FEATURES *Low collector saturation voltage: VCE(sat)=-0.5V(max.) (IC=-1A) *High speed switching time: t

Unisonic Technologies
Unisonic Technologies
datasheet pdf
2SA1020   One Watt High Current PNP Transistor VOLTAGE AND CURRENT ARE NEGATIVE

2SA1020 Preferred Device One Watt High Current PNP Transistor Features • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Total Power D

ON Semiconductor
ON Semiconductor
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[1]    

List of most widely used semiconductors

Part Number Function Manufacturers PDF
1N4007

The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

Vishay Semiconductor
Vishay
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LM317

This is a popular adjustable voltage regulator.
( 1.2V to 37V)

On Semiconductor
ON Semiconductor
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 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

   1N5818   |   LM324N    |   A1015   |   SMAJ20CA  


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