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PBSS5130QA PDF Datasheet

The PBSS5130QA is PNP Low Vcesat (biss) Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 PBSS5130QA
PNP low VCEsat (BISS) transistor

DF N1 01 PBSS5130QA 28 August 2013 0D -3 30 V, 1 A PNP low VCEsat (BISS) transistor Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN complement: PBSS4130QA. 2. Features and benefits �

NXP Semiconductors
NXP Semiconductors
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Recommended search results related to PBSS5130QA

Part No Description ( Function) Manufacturers PDF
PBSS5130PAP   PNP/PNP low VCEsat (BISS) transistor

PBSS5130PAP 12 December 2012 30 V, 1 A PNP/PNP low VCEsat (BISS) transistor Product data sheet 1. General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.

NXP Semiconductors
NXP Semiconductors
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PBSS5130T   30V 1A PNP low VCEsat (BISS) transistor

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBSS5130T 30 V, 1 A PNP low VCEsat (BISS) transistor Product specification 2003 Dec 12 Philips Semiconductors Product specification 30 V, 1 A PNP low VCEsat (BISS) transistor

NXP Semiconductors
NXP Semiconductors
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PBSS5130T   30V 1A PNP low VCEsat (BISS) transistor

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBSS5130T 30 V, 1 A PNP low VCEsat (BISS) transistor Product specification 2003 Dec 12 Philips Semiconductors Product specification 30 V, 1 A PNP low VCEsat (BISS) transistor

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2SC5130   Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)

2SC5130 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC5130 600 400 10 5(Pulse10) 2 30(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Applicatio

Sanken electric
Sanken electric
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2SC5130   SILICON POWER TRANSISTOR

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC5130 DESCRIPTION ·With TO-220F package ·High voltage. ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN 1 2 3 Base Col

SavantIC
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