No | Part number | Description ( Function ) | Manufacturers | |
1 | PBSS5130QA | PNP low VCEsat (BISS) transistor DF N1 01 PBSS5130QA 28 August 2013 0D -3 30 V, 1 A PNP low VCEsat (BISS) transistor Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN complement: PBSS4130QA. 2. Features and benefits � |
NXP Semiconductors |
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PBSS5130PAP | PNP/PNP low VCEsat (BISS) transistor PBSS5130PAP 12 December 2012 30 V, 1 A PNP/PNP low VCEsat (BISS) transistor Product data sheet 1. General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. |
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PBSS5130T | 30V 1A PNP low VCEsat (BISS) transistor DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBSS5130T 30 V, 1 A PNP low VCEsat (BISS) transistor Product specification 2003 Dec 12 Philips Semiconductors Product specification 30 V, 1 A PNP low VCEsat (BISS) transistor |
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PBSS5130T | 30V 1A PNP low VCEsat (BISS) transistor DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBSS5130T 30 V, 1 A PNP low VCEsat (BISS) transistor Product specification 2003 Dec 12 Philips Semiconductors Product specification 30 V, 1 A PNP low VCEsat (BISS) transistor |
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2SC5130 | Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose) 2SC5130 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC5130 600 400 10 5(Pulse10) 2 30(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Applicatio |
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