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PBSS4350T PDF Datasheet

The PBSS4350T is NPN Low Vcesat (biss) Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 PBSS4350T
NPN low VCEsat (BISS) transistor

DISCRETE SEMICONDUCTORS DATA SHEET PBSS4350T 50 V; 3 A NPN low VCEsat (BISS) transistor Product specification Supersedes data of 2002 Aug 08 2004 Jan 09 Philips Semiconductors Product specification 50 V; 3 A NPN low VCEsat (BISS) transistor FEATURES • Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat • High collector cu

NXP Semiconductors
NXP Semiconductors
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Recommended search results related to PBSS4350T

Part No Description ( Function) Manufacturers PDF
PBSS4350   NPN transistor

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D302 PBSS4350D NPN transistor Product specification 2000 Mar 08 Philips Semiconductors Product specification NPN transistor FEATURES • High current capabilities • Low VCEsat. APPLICATIONS • Heavy duty battery p

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PBSS4350   50 V low VCEsat NPN transistor

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D302 PBSS4350D NPN transistor Product specification 2000 Mar 08 Philips Semiconductors Product specification NPN transistor FEATURES • High current capabilities • Low VCEsat. APPLICATIONS • Heavy duty battery p

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PBSS4350D   NPN transistor

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D302 PBSS4350D NPN transistor Product specification 2000 Mar 08 Philips Semiconductors Product specification NPN transistor FEATURES • High current capabilities • Low VCEsat. APPLICATIONS • Heavy duty battery p

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PBSS4350S   50 V low VCEsat NPN transistor

DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D186 PBSS4350S 50 V low VCEsat NPN transistor Product specification 2001 Nov 19 Philips Semiconductors Product specification 50 V low VCEsat NPN transistor FEATURES • High power dissipation (830 mW) • Ultra low collector-em

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PBSS4350SPN   2.7A NPN/PNP Low VCEsat (BISS) Transistor

PBSS4350SPN 50 V, 2.7 A NPN/PNP low VCEsat (BISS) transistor Rev. 01 — 5 April 2007 Product data sheet 1. Product profile 1.1 General description NPN/PNP double low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power Surface-Mounted De

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