No | Part number | Description ( Function ) | Manufacturers | |
1 | PBSS4350T | NPN low VCEsat (BISS) transistor DISCRETE SEMICONDUCTORS DATA SHEET PBSS4350T 50 V; 3 A NPN low VCEsat (BISS) transistor Product specification Supersedes data of 2002 Aug 08 2004 Jan 09 Philips Semiconductors Product specification 50 V; 3 A NPN low VCEsat (BISS) transistor FEATURES • Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat • High collector cu |
NXP Semiconductors |
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Recommended search results related to PBSS4350T |
Part No | Description ( Function) | Manufacturers | |
PBSS4350 | NPN transistor DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D302 PBSS4350D NPN transistor Product specification 2000 Mar 08 Philips Semiconductors Product specification NPN transistor FEATURES • High current capabilities • Low VCEsat. APPLICATIONS • Heavy duty battery p |
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PBSS4350 | 50 V low VCEsat NPN transistor DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D302 PBSS4350D NPN transistor Product specification 2000 Mar 08 Philips Semiconductors Product specification NPN transistor FEATURES • High current capabilities • Low VCEsat. APPLICATIONS • Heavy duty battery p |
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PBSS4350D | NPN transistor DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D302 PBSS4350D NPN transistor Product specification 2000 Mar 08 Philips Semiconductors Product specification NPN transistor FEATURES • High current capabilities • Low VCEsat. APPLICATIONS • Heavy duty battery p |
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PBSS4350S | 50 V low VCEsat NPN transistor DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D186 PBSS4350S 50 V low VCEsat NPN transistor Product specification 2001 Nov 19 Philips Semiconductors Product specification 50 V low VCEsat NPN transistor FEATURES • High power dissipation (830 mW) • Ultra low collector-em |
NXP Semiconductors |
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PBSS4350SPN | 2.7A NPN/PNP Low VCEsat (BISS) Transistor PBSS4350SPN 50 V, 2.7 A NPN/PNP low VCEsat (BISS) transistor Rev. 01 — 5 April 2007 Product data sheet 1. Product profile 1.1 General description NPN/PNP double low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power Surface-Mounted De |
NXP Semiconductors |
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1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
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