No | Part number | Description ( Function ) | Manufacturers | |
1 | PBSS4330PAS | 3A NPN low VCEsat (BISS) transistor DF N2 020 D-3 PBSS4330PAS 11 September 2014 30 V, 3 A NPN low VCEsat (BISS) transistor Product data sheet 1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and soldarable side pads. PNP c |
NXP Semiconductors |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to PBSS4330PAS |
Part No | Description ( Function) | Manufacturers | |
PBSS4330PA | 3 A NPN low VCEsat (BISS) transistor PBSS4330PA 30 V, 3 A NPN low VCEsat (BISS) transistor Rev. 01 — 19 April 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small |
NXP Semiconductors |
|
PBSS4330X | transistor DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 PBSS4330X 30 V, 3 A NPN low VCEsat (BISS) transistor Product data sheet Supersedes data of 2003 Nov 28 2004 Dec 06 NXP Semiconductors 30 V, 3 A NPN low VCEsat (BISS) transistor Product data sheet PBSS4330X FEATURES |
NXP Semiconductors |
|
1N4330 | Diode Switching 400V 1A 2-Pin DO-41 |
New Jersey Semiconductor |
|
1N4330A | Diode Switching 400V 1A 2-Pin DO-41 |
New Jersey Semiconductor |
|
1N4330B | Diode Switching 400V 1A 2-Pin DO-41 |
New Jersey Semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |