No | Part number | Description ( Function ) | Manufacturers | |
1 | PBSS4260QA | NPN low VCEsat (BISS) transistor DF N1 01 PBSS4260QA 28 August 2013 0D -3 60 V, 2 A NPN low VCEsat (BISS) transistor Product data sheet 1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. PNP complement: PBSS5260QA. 2. Features and benefits � |
NXP Semiconductors |
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Recommended search results related to PBSS4260QA |
Part No | Description ( Function) | Manufacturers | |
PBSS4260PAN | NPN/NPN low VCEsat (BISS) transistor PBSS4260PAN 12 December 2012 60 V, 2 A NPN/NPN low VCEsat (BISS) transistor Product data sheet 1. General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. |
NXP Semiconductors |
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PBSS4260PANP | NPN/NPN low VCEsat (BISS) transistor PBSS4260PANP 12 December 2012 60 V, 2 A NPN/PNP low VCEsat (BISS) transistor Product data sheet 1. General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. |
NXP Semiconductors |
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2N4260 | Chip Type 2C4261 Geometry 0014 Polarity PNP Data Sheet No. 2C4261 Chip Type 2C4261 Geometry 0014 Polarity PNP Generic Packaged Parts: 2N4260, 2N4261 Chip type 2C4261 by Semicoa Semiconductors provides performance similar to these devices. Part Numbers: Product Summary: APPLICATIONS: Designed for low voltage, low gain R |
Semicoa Semiconductor |
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2N4260 | PNP Transistor |
Texas |
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2N4260 | SWITCHING TRANSISTOR 2N4260 2N4261 2N4261 JAN, JTX AVAILABLE CASE 20, STYLE 10 TO-72 SWITCHING TRANSISTOR PNP SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Total Device Dissipation (a TA = 25°C Derate above 25° |
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Vishay |
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