Datasheet PB600BA Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	PB600BA	N-Channel Enhancement Mode MOSFET PB600BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 12mΩ @VGS = 10V ID 9A PDFN 2X2S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Dr	UNIKC

PB60 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
PB600BA	N-Channel Enhancement Mode MOSFET PB600BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 12mΩ @VGS = 10V ID 9A PDFN 2X2S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS	UNIKC
PB60	Diode ( Rectifier )	American Microsemiconductor
PB606BA	N-Channel Enhancement Mode MOSFET PB606BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 16mΩ @VGS = 10V ID 7.8A PDFN 2X2S 100%RG TEST 100%UIL TEST ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS	UNIKC

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Número de pieza	Descripción	Fabricantes	PDF
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