No | Part number | Description ( Function ) | Manufacturers | |
1 | PB5G2JU | Dual N-Channel Enhancement Mode MOSFET PB5G2JU Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 20V 9.5mΩ @VGS = 4.5V ID 12A TDFN 2X3-6 1,2:S1 3:G1 4:G2 5,6:S2 7:D1/D2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±10 Continuous Drain Current Pulsed Drain Current1 TA |
UNIKC |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to PB5G2JU |
Part No | Description ( Function) | Manufacturers | |
05203GOA | Silicon Controlled Rectifier |
Microsemi Corporation |
|
05203GOA | Silicon Controlled Rectifier |
Microsemi Corporation |
|
05203GOB | Silicon Controlled Rectifier |
Microsemi Corporation |
|
05203GOB | Silicon Controlled Rectifier |
Microsemi Corporation |
|
05203GOC | Silicon Controlled Rectifier |
Microsemi Corporation |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |