No | Part number | Description ( Function ) | Manufacturers | |
1 | PASMA11CA | P4SMA SERIIES P4SMA SERIIES VBR : 6.8 - 440 Volts PPK : 400 Watts Features • 400W surge capability at 1ms • Excellent clamping capability • Low zener impedance • Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) • Typical IR less then 1μA above 10V • RoHS compliant package Applications • For Bi-directional without “C” • Electrical characteristics a |
Bruckewell |
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Recommended search results related to PASMA11CA |
Part No | Description ( Function) | Manufacturers | |
PASMA110C | P4SMA SERIIES P4SMA SERIIES VBR : 6.8 - 440 Volts PPK : 400 Watts Features • 400W surge capability at 1ms • Excellent clamping capability • Low zener impedance • Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) • Typical IR less then 1μA above 10V • RoHS co |
Bruckewell |
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PASMA110CA | P4SMA SERIIES P4SMA SERIIES VBR : 6.8 - 440 Volts PPK : 400 Watts Features • 400W surge capability at 1ms • Excellent clamping capability • Low zener impedance • Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) • Typical IR less then 1μA above 10V • RoHS co |
Bruckewell |
|
PASMA11C | P4SMA SERIIES P4SMA SERIIES VBR : 6.8 - 440 Volts PPK : 400 Watts Features • 400W surge capability at 1ms • Excellent clamping capability • Low zener impedance • Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) • Typical IR less then 1μA above 10V • RoHS co |
Bruckewell |
|
011N40P1 | KHB011N40P1 datasheet39.com SEMICONDUCTOR TECHNICAL DATA General Description KHB011N40P1/F1/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR KHB011N40P1 A O C F E G B Q I DIM MILLIMETERS _ 0.2 9.9 + A B C D E This planar stripe MOSFET has better characteristics, such as fast switching time, |
KEC |
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015AZ11 | Silicon Epitaxial Planar Type Diode 015AZ2.0~015AZ12 TOSHIBA Diode Silicon Epitaxial Planar Type 015AZ2.0~015AZ12 Constant Voltage Regulation Applications Unit: mm l Small package l Nominal voltage tolerance about ±2.5% (2.0V~12V) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Power dissipation |
Toshiba Semiconductor |
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