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PASMA11CA PDF Datasheet

The PASMA11CA is P4sma Seriies. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 PASMA11CA
P4SMA SERIIES

P4SMA SERIIES VBR : 6.8 - 440 Volts PPK : 400 Watts Features • 400W surge capability at 1ms • Excellent clamping capability • Low zener impedance • Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) • Typical IR less then 1μA above 10V • RoHS compliant package Applications • For Bi-directional without “C” • Electrical characteristics a

Bruckewell
Bruckewell
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Recommended search results related to PASMA11CA

Part No Description ( Function) Manufacturers PDF
PASMA110C   P4SMA SERIIES

P4SMA SERIIES VBR : 6.8 - 440 Volts PPK : 400 Watts Features • 400W surge capability at 1ms • Excellent clamping capability • Low zener impedance • Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) • Typical IR less then 1μA above 10V • RoHS co

Bruckewell
Bruckewell
datasheet pdf
PASMA110CA   P4SMA SERIIES

P4SMA SERIIES VBR : 6.8 - 440 Volts PPK : 400 Watts Features • 400W surge capability at 1ms • Excellent clamping capability • Low zener impedance • Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) • Typical IR less then 1μA above 10V • RoHS co

Bruckewell
Bruckewell
datasheet pdf
PASMA11C   P4SMA SERIIES

P4SMA SERIIES VBR : 6.8 - 440 Volts PPK : 400 Watts Features • 400W surge capability at 1ms • Excellent clamping capability • Low zener impedance • Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) • Typical IR less then 1μA above 10V • RoHS co

Bruckewell
Bruckewell
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011N40P1   KHB011N40P1

datasheet39.com SEMICONDUCTOR TECHNICAL DATA General Description KHB011N40P1/F1/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR KHB011N40P1 A O C F E G B Q I DIM MILLIMETERS _ 0.2 9.9 + A B C D E This planar stripe MOSFET has better characteristics, such as fast switching time,

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015AZ11   Silicon Epitaxial Planar Type Diode

015AZ2.0~015AZ12 TOSHIBA Diode Silicon Epitaxial Planar Type 015AZ2.0~015AZ12 Constant Voltage Regulation Applications Unit: mm l Small package l Nominal voltage tolerance about ±2.5% (2.0V~12V) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Power dissipation

Toshiba Semiconductor
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