No | Part number | Description ( Function ) | Manufacturers | |
1 | PA1162 | 800-960 MHz(4 Watt Ultra Linear Power Amplifier) PA1162 4 Watt 800-960 MHz. Ultra Linear Power Amplifier Features (typical values) High IP3 ............................................. +52.0 dBm. Low NF ......................................................2.3 dB. High Output Power ............................. +36.2 dBm. Low Cost Parame te r Frequency Gain Gain Flatness Reverse Isolation Pout @ 1dB. comp. Noise Figure VSW |
Tyco Electronics |
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Recommended search results related to PA1162 |
Part No | Description ( Function) | Manufacturers | |
2N1162 | SILICON PNP TRANSISTOR |
New Jersey Semiconductor |
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2SA1162 | Silicon PNP Epitaxial Type Transistor 2SA1162 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1162 Audio Frequency General Purpose Amplifier Applications • High voltage and high current: VCEO = −50 V, IC = −150 mA (max) • Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 |
Toshiba Semiconductor |
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2SA1162 | PNP Transistor FEATURES Low noise : NF= 1dB(Typ.),10dB (Max.) Complementary to 2SC2712. Small Package. Plastic-Encapsulate Transistors 2SA1162(PNP) MAXIMUM RATINGS (TA=25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Po |
HOTTECH |
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2SA1162 | Silicon PNP Epitaxial Type Transistor 2SA1162 Silicon PNP Epitaxial Type Transistor Features • High voltage and high current: VCEO = -50 V, IC = 150 mA (max) • Low noise: NF = 1dB (typ.), 10dB (max) • Small package • RoHS compliant package Mechanical Data • Case: Molded plastic • Epoxy: UL94-V0 rate flame |
Bruckewell |
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2SA1162 | Silicon PNP transistor 2SA1162 Rev.E Mar.-2016 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a SOT-23 Plastic Package. 特征 / Features 电压和集电极直流电流大,极好的放大线性,高放大,噪声系数低,与 2SC2712 互补� |
BLUE ROCKET ELECTRONICS |
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Part Number | Function | Manufacturers | |
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Vishay |
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ON Semiconductor |
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