Datasheet P8N Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	P8N18	RFP8N18	ETC	data
2	P8N60C	FQP8N60C FQP8N60C/FQPF8N60C QFET FQP8N60C/FQPF8N60C 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailore	Fairchild Semiconductor	data
3	P8NA50	STP8NA50 STP8NA50 STP8NA50FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP8NA50 STP8NA50FI s s s s s s s V DSS 500 V 500 V R DS( on) < 0.85 Ω < 0.85 Ω ID 8A 4.5 A TYPICAL RDS(on) = 0.7 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVAL	ST Microelectronics	data
4	P8NC50FP	STP8NC50FP N-CHANNEL 500V - 0.7 Ω - 8A TO-220/TO-220FP/I2PAK PowerMesh™II MOSFET TYPE STP(B)8NC50(-1) STP8NC50FP s s s s s STP8NC50 - STP8NC50FP STB8NC50-1 VDSS 500 V 500 V RDS(on) < 0.85 Ω < 0.85 Ω ID 8A 8A 3 1 2 TYPICAL RDS(on) = 0.7 Ω EXTREMELY HIGH dv/dt CAPABILITY 100%	STMicroelectronics	data
5	P8NC60FP	STP8NC60FP N-CHANNEL 600V - 0.85Ω - 7A TO-220/TO-220FP PowerMesh™II MOSFET TYPE STP8NC60 STP8NC60FP s s s s s STP8NC60 STP8NC60FP VDSS 600 V 600 V RDS(on) < 1.0 Ω < 1.0 Ω ID 7A 7A TYPICAL RDS(on) = 0.85Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE B	STMicroelectronics	data

P8N Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	P8N18	RFP8N18	ETC	data
2	P8N60C	FQP8N60C FQP8N60C/FQPF8N60C QFET FQP8N60C/FQPF8N60C 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailore	Fairchild Semiconductor	data
3	P8NA50	STP8NA50 STP8NA50 STP8NA50FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP8NA50 STP8NA50FI s s s s s s s V DSS 500 V 500 V R DS( on) < 0.85 Ω < 0.85 Ω ID 8A 4.5 A TYPICAL RDS(on) = 0.7 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVAL	ST Microelectronics	data
4	P8NC50FP	STP8NC50FP N-CHANNEL 500V - 0.7 Ω - 8A TO-220/TO-220FP/I2PAK PowerMesh™II MOSFET TYPE STP(B)8NC50(-1) STP8NC50FP s s s s s STP8NC50 - STP8NC50FP STB8NC50-1 VDSS 500 V 500 V RDS(on) < 0.85 Ω < 0.85 Ω ID 8A 8A 3 1 2 TYPICAL RDS(on) = 0.7 Ω EXTREMELY HIGH dv/dt CAPABILITY 100%	STMicroelectronics	data
5	P8NC60FP	STP8NC60FP N-CHANNEL 600V - 0.85Ω - 7A TO-220/TO-220FP PowerMesh™II MOSFET TYPE STP8NC60 STP8NC60FP s s s s s STP8NC60 STP8NC60FP VDSS 600 V 600 V RDS(on) < 1.0 Ω < 1.0 Ω ID 7A 7A TYPICAL RDS(on) = 0.85Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE B	STMicroelectronics	data
6	P8NK100Z	STP8NK100Z STF8NK100Z STP8NK100Z N-CHANNEL 1000V - 1.60Ω - 6.5A - TO-220 - TO-220FP Zener-Protected SuperMESH™ MOSFET General features Type VDSS RDS(on) ID Pw STF8NK100Z 1000 V <1.85Ω 6.5 ANote 1 40 W STP8NK100Z 1000 V <1.85Ω 6.5 A 160 W ■ EXTREMELY HIGH dv/dt CAPABILITY �	STMicroelectronics	data
7	P8NK80	STP8NK80Z STP8NK80Z - STP8NK80ZFP STW8NK80Z N-CHANNEL 800V - 1.3Ω - 6.2A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESH™Power MOSFET TYPE STP8NK80Z STP8NK80ZFP STW8NK80Z s s s s s s VDSS 800 V 800 V 800 V RDS(on) < 1.5 Ω < 1.5 Ω < 1.5 Ω ID 6.2 A 6.2 A 6.2 A Pw 140 W 30 W 1	STMicroelectronics	data

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Número de pieza	Descripción	Fabricantes	PDF
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