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Datasheet P6N80 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 P6N80   FQP6N80

FQP6N80 September 2000 QFET FQP6N80 800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state res
 Fairchild Semiconductor
Fairchild Semiconductor		 datasheet P6N80 pdf

P6 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
P60NF06

STP60NF06

STP60NF06 N-channel 60V - 0.014Ω - 60A TO-220 STripFET II™ Power MOSFET General features Type STP60NF06 VDSS 60V RDS(on) <0.016Ω ID 60A ■ Exceptional dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization Description This Power MOSFET
ST Microelectronics
ST Microelectronics		 datasheet pdf - ST Microelectronics
P6NK60ZFP

STP6NK60ZFP

STB6NK60Z - STB6NK60Z-1 STP6NK60ZFP - STP6NK60Z N-channel 600 V - 1 Ω - 6 A - TO-220/TO-220FP/D2PAK/I2PAK Zener-Protected SuperMESH™ Power MOSFET Features Type STB6NK60Z STB6NK60Z-1 STP6NK60ZFP STP6NK60Z ■ ■ ■ VDSS 600 V 600 V 600 V 600 V RDS(on) < 1.2 Ω < 1.2 Ω <
 STMicroelectronics
STMicroelectronics		 datasheet pdf - STMicroelectronics
P6NK90ZFP

STP6NK90ZFP

STP6NK90Z - STP6NK90ZFP STB6NK90Z N-CHANNEL 900V - 1.75Ω - 5.8A TO-220/TO-220FP/D2PAK Zener-Protected SuperMESH™Power MOSFET TYPE STP6NK90Z STP6NK90ZFP STB6NK90Z s s s s s s VDSS 900 V 900 V 900 V RDS(on) <2Ω <2Ω <2Ω ID 5.8 A 5.8 A 5.8 A Pw 140 W 30 W 140 W 3 1 2 T
 STMicroelectronics
STMicroelectronics		 datasheet pdf - STMicroelectronics


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
Sanken		 PDF


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