Datasheet P6503FM6 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	P6503FM6	P-Channel Enhancement Mode MOSFET P6503FM6 P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 65mΩ @VGS = -4.5V ID -3.6A SOT-23-6 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±12 Conti	UNIKC

P6503 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
P6503NJ	N&P-Channel Enhancement Mode Field Effect Transistor NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P6503NJ TSOPJW-8 PRODUCT SUMMARY V(BR)DSS N-Channel P-Channel 30 -30 RDS(ON) 65m£[ 150m£[ ID 4A -3A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Not	Niko
P6503FM	P-Channel Enhancement Mode MOSFET P6503FM P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 65mΩ @VGS = -4.5V ID -3.6A SOT-23 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -30 Gate-Source Voltage	UNIKC
P6503FMA	P-Channel Enhancement Mode MOSFET P6503FMA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 55mΩ @VGS = -10V ID -3.1A SOT-23(S) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±12 Continuous Drain	UNIKC

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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