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P5N60FI PDF Datasheet

The P5N60FI is Stp5n60fi. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 P5N60FI
STP5N60FI

Free Datasheet http:// Free Datasheet http:// Free Datasheet http:// Free Datasheet http:// Free Datasheet http:// Free Datasheet http:// Free Datasheet http://

STMicroelectronics
STMicroelectronics
pdf

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Part No Description ( Function) Manufacturers PDF
FDP5N60NZ   MOSFET ( Transistor )

FDP5N60NZ / FDPF5N60NZ — N-Channel UniFETTM II MOSFET FDP5N60NZ / FDPF5N60NZ N-Channel UniFETTM II MOSFET 600 V, 4.5 A, 2.0 Ω Features • RDS(on) = 1.65 Ω (Typ.) @ VGS = 10 V, ID = 2.25 A • Low Gate Charge (Typ. 10 nC) • Low Crss (Typ. 5 pF) • 100% Avalanche Tested �

Fairchild Semiconductor
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FGP5N60LS   IGBT

FGP5N60LS — 600 V, 5 A Field Stop IGBT FGP5N60LS 600 V, 5 A Field Stop IGBT Features • High Current Capability • Low Saturation Voltage: VCE(sat) =1.7 V @ IC = 5 A • High Input Impedance • RoHS Compliant Applications • HID Ballast November 2013 General Description U

Fairchild Semiconductor
Fairchild Semiconductor
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FGP5N60UFD   IGBT

FGP5N60UFD 600V, 5A Field Stop IGBT FGP5N60UFD 600V, 5A Field Stop IGBT Features • High current capability • Low saturation voltage: VCE(sat) =1.9V @ IC = 5A • High input impedance • Fast switching • RoHS compliant Applications • Induction Heating, UPS, SMPS, PFS Oc

Fairchild Semiconductor
Fairchild Semiconductor
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FQP5N60   600V N-Channel MOSFET

FQP5N60 April 2000 QFET FQP5N60 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minim

Fairchild Semiconductor
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FQP5N60   FQP5N60

FQP5N60 热阻特性 参数名称 芯片对管壳热阻 芯片对环境的热阻 符号 RθJC RθJA SVD5N60AT 1.25 62.5 SVD5N60AF 3.79 62.5 单位 °C/W °C/W 关断特性参数(除非特殊说明,TC=25°C) 参 数 漏源击穿电压 漏源漏电流 栅源漏电流 栅极开�

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[1]    

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 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

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