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Datasheet P51256SL Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1P51256SL256K CMOS Slow Static RAM

Intel
Intel
cmos


P51 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1P5102FMP-Channel Enhancement Mode MOSFET

P5102FM P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -20V 45mΩ @VGS = -4.5V ID -3.5A SOT-23 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±8 Continuou
UNIKC
UNIKC
mosfet
2P5102FM6P-Channel Enhancement Mode MOSFET

P5102FM6 P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -20V 51mΩ @VGS = -4.5V ID -4.2A SOT-23-6 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±8 Contin
UNIKC
UNIKC
mosfet
3P5102FMAP-Channel Enhancement Mode MOSFET

P5102FMA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -20V 45mΩ @VGS = -4.5V ID -3.5A SOT-23(S) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±8 Conti
UNIKC
UNIKC
mosfet
4P5102FMNVP-Channel Enhancement Mode MOSFET

P5102FMNV P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -20V 45mΩ @VGS = -4.5V ID -3.5A SOT-23 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±8 Continu
UNIKC
UNIKC
mosfet
5P5103Asolid state crowbar devices

Data Book and Design Guide TECCOR ELECTRONICS 1800 Hurd Drive Irving, Texas 75038 United States of America Phone: +1 972-580-7777 Fax: +1 972-550-1309 Web site: http://www.teccor.com E-mail: [email protected] An Invensys company Teccor Electronics is the proprietor of the SIDACtor®, B
Teccor Electronics
Teccor Electronics
data
6P5103ACMCsolid state crowbar devices

Data Book and Design Guide TECCOR ELECTRONICS 1800 Hurd Drive Irving, Texas 75038 United States of America Phone: +1 972-580-7777 Fax: +1 972-550-1309 Web site: http://www.teccor.com E-mail: [email protected] An Invensys company Teccor Electronics is the proprietor of the SIDACtor®, B
Teccor Electronics
Teccor Electronics
data
7P5103EAGP-Channel Enhancement Mode MOSFET

P5103EAG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 51mΩ @VGS = -10V ID -5A TSOP- 06 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -30 Gate-Source Voltage Drain-Gate Voltage
UNIKC
UNIKC
mosfet



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
PDF


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